Powermaster Semiconductor

Product differentiation through low conduction loss & high ruggedness capability

1200V 20A SiC Diode	PMS	Leading A	Leading B	Leading C	Leading D
VF @ Tc=25℃	1.39 V	1.43 V	1.53 V	1.48 V	1.46 V
IFSM @ 10ms	210 A	220 A	335 A	104 A	200 A
IR @ Tc=25℃	1 uA	21 uA	22 uA	2 uA	0.1 uA
Qc @Vr=800V	121 nC	138 nC	114 nC	123 nC	148 nC

Key Features

Low forward voltage High surge current capability No reverse recovery current 175°C Max junction temperature Switching behavior independent of temperature
Key Benefits

High Performance/Cost Ratio High reliability capability Suitable for wide rage of applications